AX7695LAM-37 MKS Remote Plasma Source

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Essential details：AX7695LAM-37 MKS Remote Plasma Source

The R*evolution® III integrated remote plasma source, with improved capability over the earlier model, provides the highest performing and cleanest source of reactive gas species required in the processing of semiconductor wafers. The first in a new family of remote plasma sources specifically designed for “on-wafer” applications, the innovative R*evolution III combines MKS’s field-proven, patented Low-Field Toroidal plasma technology with a robust plasma applicator design that produces ultra clean atomic neutrals or radicals.
Atomic radicals are essential in many processes, such as photo-resist removal, wafer pre-clean, and thin film nitridation and oxidation. Radicals are typically created by generating a plasma; however, the associated charged particles are sometimes undesirable. To avoid these adverse effects, the plasma is generated remotely and the radicals are efficiently transported to the process chamber.
The R*evolution III reactive gas generator integrates a quartz vacuum chamber, an RF power supply and all necessary controls into a compact, self-contained unit for easy installation directly on the tool’s process chamber. The result is an extremely clean source of atomic radicals to bring about the desired reaction on the wafer, at a greatly reduced level of complexity. Delivering up to 6 kW of plasma power, the R*evolution III remote plasma source provides high flows of radicals to the process (up to 6 slm), resulting in strip or etch rates that are twice as fast as those of conventional microwave systems. Because of its efficiency and lower cost, the R*evolution III remote plasma source significantly reduces overall investment and tool operating costs. Additionally, its smaller size and design simplicity benefits the user with ease of installation, operation and maintenance.

AX7695LAM-37

• Integrated, self-contained unit designed for on-chamber installation
• Quartz plasma body for chemical inertness, low-recombination for most atomic species, and high-purity
• High performance, lower cost alternative to microwave or ICP systems for on- wafer applications
• Up to 6 kW of plasma power
— Accurate power reproducibility
— Moderate degree of power control
• Fast, reliable plasma ignition
• Based on the patented low-field toroidal plasma technology
— Proven reliability
• Applications include photoresist removal, gate nitridation, oxidation, wafer pre-clean

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