3BHB021400R0002 Integrated gate control transistor

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Essential details：3BHB021400R0002 Integrated gate control transistor

Product Description

3BHB021400R0002 Integrated Gate Commutated Thyristor (IGCT) is a new type of high-voltage and high-power semiconductor switching device. It combines the advantages of Thyristor and Insulated Gate Bipolar Transistor (IGBT), with high voltage, high current, high switching speed, low loss and so on.
3BHB021400R0002 The structure of IGCT is similar to that of thyristor, but a MOSFET structure is integrated in the gate area to realize the function of gate control. The working principle of IGCT is similar to that of thyristors, when the gate applies a forward voltage, the gate current will cause the device to be on, and when the gate current is zero, the device will automatically turn off. Compared with thyristors, IGCT has faster switching speed and lower loss, while also having higher voltage and current capacity.
IGCT is mainly used in HVDC transmission, reactive power compensation, motor drive, inverter and other fields, especially in high voltage, high current, high frequency switch and other applications has great advantages.

5SHY4045L0004

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3BHB021400R0002 Integrated gate control transistor

3BHB021400R0002 IGBT (Insulated Gate Bipolar Transistor) and IGCT (Integrated Gate Commutated Thyristor) are two different types of power semiconductor devices, their differences are as follows:
Structure: IGBT is a MOSFET and BJT (bipolar transistor) composite device, and IGCT is a device based on thyristor technology.
3BHB021400R0002 Control mode: IGBT is through the gate voltage to control its on and off, while IGCT is through the gate current to control its on and off.
Switching speed: IGBT switches faster than IGCT and is suitable for high frequency switching applications.
Voltage and current capacity: IGCT has higher voltage and current capacity than IGBT and is suitable for high power applications.
Cost: IGCT costs more than IGBT.
In general, IGBT is suitable for high frequency switching applications, such as frequency converters, UPS, etc., while IGCT is suitable for high power applications, such as HVDC transmission, reactive power compensation, etc.