Vishay Intertechnology, Inc. (NYSE: VSH announced the launch of a new 80 V symmetrical dual-channel N-channel power MOSFET– SiZF4800LDT, combining high – and low-side TrenchFET® Gen IV MOSFETs in 3HAC17484-7/09  a 3.3mm x 3.3mm PowerPAIR® 3x3FS monocoque package. Vishay Siliconix SiZF4800LDT is suitable for power conversion in industrial and communications applications, enhancing thermal performance, reducing component count and simplifying design while improving power density and energy efficiency.

The recently announced dual-channel MOSFETs can be used to replace two PowerPAK 1212 packaged discrete devices, saving 50% of substrate space. The device provides designers with space-saving solutions for synchronous buck converters, point-of-load (POL) converters, DC/DC converters half-bridge and full-bridge power stages for applications including radio base stations, industrial motor drives, welding equipment and power tools. For these applications, the SiZF4800LDT high-low side MOSFETs offer a 50% duty cycle optimization combination with simplified circuit drivers at 4.5V logic level conduction.

3HAC17484-7/09 

In order to improve the power density, the typical on-resistance value of the MOSFET is reduced to 18.5m  under the condition of 4.5V, reaching the industry’s advanced level. 16% lower than the closest competitor in the same package size. SiZF4800LDT Low on-resistance and gate charge product, that is, MOSFET power conversion application important value coefficient (FOM) is 131m*nC, on-resistance and gate charge product improves the efficiency of high frequency switching applications.

3HAC17484-7/09  The device uses flip chip technology to enhance the heat dissipation capacity, and the thermal resistance is 54% lower than the competitive MOSFET. The SiZF4800LDT has low on-resistance and thermal resistance, and A continuous leakage current of 36 A, which is 38% higher than similar competing devices. The unique pin configuration of the MOSFETs helps simplify the PCB layout and supports a shortened switching loop, thereby reducing parasitic inductance. SiZF4800LDT is 100% Rg and UIS tested, RoHS compliant and halogen-free.