3BHB030310R0001 4500V 91mm 5SHY4045L0006  IGCT series module

Integrated Gate Commutated Thyristors (IGCT) series module is a new type of power semiconductor device, its application range covers transmission grid, wind power, rail commutated and metallurgy and other high-power scenarios. Compared with the traditional GTO structure, IGCT has more obvious advantages. It does not need to turn off the absorption circuit, thus reducing the volume and weight of the converter, improving the efficiency and reliability of the converter, and reducing the cost. At the same time, the gate drive circuit is integrated in the IGCT, which improves the anti-electromagnetic interference ability of the converter. In addition, the on-state and off losses of IGCT are also small.

Taking 5SHY4045L0001 IGCT series module as an example, it adopts GTO-based structure, integrated grid structure for hard grid drive, buffer layer structure and transparent anode emitter technology. Because of the buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%. In addition, this kind of device also integrates a continuous current diode with good dynamic characteristics on a chip, and realizes the organic combination of low on-state voltage drop, high blocking voltage and transistor stable switching characteristics.

ABB’s IGCT 5SHX0660F0002 SCR module not only has a wide input range, can adapt to different power input requirements, provide flexible solutions for various application scenarios, but also ensures long-term stability through efficient heat dissipation design. In addition, the module also has a programmable function, users can realize different control logic and algorithms through programming according to the actual needs, to meet the diversified application needs.

In general, the IGCT series module has a wide range of applications in the field of power electronics, and its efficient, reliable and flexible characteristics make it ideal for solving complex power needs.

5SHY4045L0006