0190-47768 AMAT HDP CVD MKS reaction gas generator

Model: AX-7670 0190-47768
Flow range: 0~1000sccm (standard cubic cm per minute)
Pressure range: 0~1000Torr (Torr, pressure unit)
Accuracy: ±0.5%
Applications: semiconductor devices, optoelectronic devices, nanotechnology, etc
Device size: 2000mm x 1500mm x 1800mm
Housing material: stainless steel
Deposition temperature range: 100°C – 1000°C
Deposition rate range: 5nm/min – 100nm/min
Rated power: 10kW
Working gas: SiH4, NH3, N2, H2, Ar, O2, etc

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Description

Overview


Essential details:0190-47768 AMAT HDP CVD MKS reaction gas generator

Product Description

The 0190-47768 is the model of the AMAT HDP CVD MKS reaction gas generator, which is based on patented low-field torus plasma technology to provide a wider range of operating pressures while maintaining a high input gas dissociation rate. It is a compact, lid-mounted unit that is easy to integrate. The device eliminates the need for argon during processing, allowing the selection of ignition gases compatible with existing process gases, increasing the overall process, reducing processing time, and improving throughput.

Product details are as follows:

Model: AX-7670 0190-47768
Flow range: 0 to 1000sccm
Pressure range: 0~1000Torr
Accuracy: ±0.5%
Applications: semiconductor devices, optoelectronic devices, nanotechnology, etc
The equipment is suitable for manufacturing processes in semiconductor, optoelectronics, nanotechnology and other fields, and uses advanced technology to ensure high precision and reliability. The device size is 2000mm x 1500mm x 1800mm, the shell material is stainless steel, the deposition temperature range is 100°C – 1000°C, the deposition rate range is 5nm/min – 100nm/min, the rated power is 10kW. Working gases include SiH4, NH3, N2, H2, Ar, O2, etc.

0190-47768

Product parameter

Model: AX-7670 0190-47768
Flow range: 0~1000sccm (standard cubic cm per minute)
Pressure range: 0~1000Torr (Torr, pressure unit)
Accuracy: ±0.5%
Applications: semiconductor devices, optoelectronic devices, nanotechnology, etc
Device size: 2000mm x 1500mm x 1800mm
Housing material: stainless steel
Deposition temperature range: 100°C – 1000°C
Deposition rate range: 5nm/min – 100nm/min
Rated power: 10kW
Working gas: SiH4, NH3, N2, H2, Ar, O2, etc

APPLICATION

Semiconductor manufacturing: Used to produce semiconductor devices, such as integrated circuits, chips, transistors, etc., by depositing various material layers on silicon wafers through the chemical vapor deposition (CVD) process.

Optoelectronics: In the production of optoelectronic devices, such as leds (light emitting diodes), lasers, photodetectors, etc., used to deposit the required thin film materials.

Nanotechnology: In the research and production of nanomaterials, CVD technology can be used to synthesize materials with specific nanostructures.

Solar cells: In the production process of solar cells, it is used to deposit conductive film, anti-reflection film, etc.

Data storage: used to deposit magnetic materials and protective layers in the manufacture of the heads and disks of hard drives.

Surface coating: Used in various industrial applications to deposit thin films that are resistant to wear, corrosion or specific functions on the surface of metals, plastics or other materials.

Biomedical: In the manufacture of biosensors and medical devices, for the deposition of biocompatible thin film materials.

Aerospace: Used in the aerospace industry to deposit high-performance coatings to improve the heat resistance, wear resistance and corrosion resistance of materials.

Automotive industry: In the manufacture of automotive components, special materials used to deposit wear-resistant coatings or to improve the performance of components.

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