Description
Overview
Essential details:5SHY3545L0014 3BHB013085R0001 IGCT MODULE ABB
Products Description
Product ID:3BHB013085R0001
ABB Type Designation:5SHY 3545L0009
Catalog Description:5SHY 3545L0009; IGCT MODULE
Long Description:5SHY 3545L0009
The Integrated Gate-Commutated Thyristor (IGCT) was introduced about 15 years ago and has established itself as a preferred solution for a number of high power electronics applications. These applications have in common that the rated power level is in the megawatts (MW) and they range from industrial drives and track-side supplies to power quality and high-current breakers. In this article we highlight the features making the IGCT so attractive for high power applications and we discuss the developments that will further strengthen the IGCT’s advantages in high power applications.
ABB offers two different types of IGCTs: the asymmetric and the reverse conducting (RC). The asymmetric IGCT offers highest power levels. It is available as standard asymmetric
IGCT and as the newer HPT-IGCT with improved turn-off capability. Applying asymmetric IGCTs allows choosing optimized free-wheel diodes as for instances ABBs new IGCT diodes as presented in Bodo’s Power Systems, issue May 2012.
The RC-IGCT features a monolithically integrated free-wheel diode and therefore enables very compact stack designs. The RC-IGCT has been designed aiming for good performance in drive applications with moderate regeneration to the grid.
Voltage ratings 4,500 up to 6,500 V with current ratings of 520 up to 5,000 A of peak turn-off current
ABB’s IGCTs are available with different voltage ratings. The 4,500 V and 5,500 V devices are perfectly well suited for 3-level inverters targeting the standard line voltages 3,300 V and 4,160 V (Table 1). The availability of different IGCT sizes allows drive manufacturers to offer inverter families covering a certain power range just by choosing the corresponding IGCT.
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