3BHB020538R0001 5SHX1060H0003 Reverse Conducting Integrated Gate-Commutated Thyristor

IGCT (Integrated Gate commutated thyristor) is a kind of power electronic device with high voltage and high current, its working principle is based on the principle of thyristor. Thyristor is a thyristor device, its basic structure includes PNPN four-layer semiconductor structure, through the control of gate voltage to control its on-off and off.
The gate drive circuit of IGCT controls the on-off and off of IGCT by controlling the gate voltage. When the gate voltage is high enough, the IGCT is triggered and enters an on-on state, allowing current to flow from the anode to the cathode. When the gate voltage is reduced, the IGCT gradually shuts off, preventing current flow.
A Reverse Conducting Integrated Circuit is a special type of integrated circuit that works on the basis of the anti-conducting properties of a semiconductor diode. The reverse conduction integrated circuit usually includes one or more reverse conduction diodes that allow current to flow when reverse biased.
In normal operation, the inverse conduction IC works like an ordinary integrated circuit, but when the input voltage is reversed, the inverse conduction diode will automatically enter the inverse conduction state, allowing the current to flow from the output to the input. This anti-pilot feature can be used for power management, battery protection, overvoltage protection and other applications.
In short, the operating principles of IGCT and inverse conduction IC are based on the characteristics of thyristors and semiconductor diodes respectively, and they have different application fields and characteristics.