5SHY3545L0016 3BHB020720R0002 3BHE039203R0101 GVC736CE101 IGCT MODULE ABB

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Essential details：5SHY3545L0016 3BHB020720R0002 3BHE039203R0101 GVC736CE101 IGCT MODULE ABB

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Integrated gate unit – critical to device performance
The gate driving circuit, commonly called gate unit, is critical for the device performance and is therefore an integral part of the IGCT. There is no need to externally source a gate unit which even might compromise the device performance. The IGCT only needs a power supply and two optical fibers for the control and can be considered plug-and-play, although it may be a bit unusual to describe a MW-device in this way.
Low on-state losses
Due to its design the unirradiated IGCT has a very low on-state voltage drop and therefore very low on-state losses. This makes the IGCT very well suited for a number of static and hybrid breaker applications as well as an interesting alternative for high power multi-level converters. Traditional applications, however, require a trade-off between on-state losses and turn-off losses. The relationship between on-state and turn-off losses is determined by irradiation of the GCT wafer. ABB offers IGCTs with low on-state losses, with low turn-off losses as well as with a good trade-off between the two.
Press-pack design for efficient double sided cooling
The press-pack design of the IGCT has the advantage that the device can be mounted directly between two heat-sinks and therefore be efficiently cooled from both sides simultaneously. Further, there is no need for thick layers of thermal compounds thus allowing for very low thermal resistances in the cooling system. This directly translates into very high power densities for the assembly and reduces the space required for a converter of a given rating when compared with assemblies using isolated power components.
Press-pack design for high load cycling capability
The hermetically sealed press-pack design of the IGCT has proven its extraordinary load cycling capability and reliability in numerous applications for years in the field. Consisting of on- ly a few layers of well-designed materials there are no issues with solder voids or bond liftoffs as apparent in other packaging technologies. Proper coatings and the used materials themselves assure that the mechanical wear of the device due to temperature excursions when operating at intermittent load are kept within reasonable limits. This makes the IGCT well suited also in applications with severe conditions as experienced in steel mills, mine hoists, marine drives and others.

5SHY3545L0016 3BHB019719R0101 GVC736BE101 5SXE06-0160

Increased junction temperature
A possible way to increase the output power of an existing converter design is to increase the temperature rating of the used power semiconductors. For continuous operation the cooling system may set a limit for the additional losses that result from the increased temperature. For intermittent operation though, the temperature increase is a valid option. This since the increase in average power, and through that the requirements on the cooling system, is limited. Important is that the semiconductor can handle a high load for a limited amount of time and by this avoids to step up in converter size.
To achieve such a high load capability, a number of improvements to the HPT-IGCT are being implemented with a targeted operating temperature increase from 125 °C to 140 °C. In the silicon the corrugated p-base doping profiles introduced in the HPT-IGCT have been optimized to allow for full SOA exploitation over the whole temperature range from 0 °C to 140 °C. Further, also internal interfaces like the metallization on the wafer have been improved to achieve a higher thermo-mechanical wear resistance. These measures allow for the higher temperature excursions of the device under intermittent operation at 140 °C. The verification of these improvements has started and the first results look very promising.
The reverse blocking IGCT
Certain AC applications and current source inverters (CSIs) require a switching device that is symmetrically blocking. Although this could be realized by using an asymmetric IGCT connected in series with a fast diode, the preferred solution is a symmetric IGCT. Since the performance requirements and some modes of operation of symmetric IGCTs considerably differ from asymmetric IGCTs, there is quite much learning needed for their realization. ABB has taken the challenge and realized the first symmetric IGCTs that are undergoing extensive testing. A new product lineup is planned with a voltage rating of 6,500 V, ideally suited for a 2,300 V line voltage as per table 2.

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