839-101612-887 high-performance bulk epitaxial deposition reactor

839-101612-887 is a high-performance bulk epitaxial deposition reactor manufactured by Applied Materials (AMAT) for low-temperature wafer growth. This product has the following features:

Technical specifications:

Deposition rate: 0.0005 to 0.03 microns per hour.
Substrate support: from 300 mm to 450 mm, providing greater application compatibility.
Gas atmosphere: Use a stable gas atmosphere, such as oxygen and nitrogen.
Temperature control: microprocessor based temperature control and monitoring device.

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Description

Overview

Essential details：839-101612-887 high-performance bulk epitaxial deposition reactor

Product Description

839-101612-887 is a high-performance bulk epitaxial deposition reactor manufactured by Applied Materials (AMAT) for low-temperature wafer growth. This product has the following features:

Technical specifications:

Deposition rate: 0.0005 to 0.03 microns per hour.
Substrate support: from 300 mm to 450 mm, providing greater application compatibility.
Gas atmosphere: Use a stable gas atmosphere, such as oxygen and nitrogen.
Temperature control: microprocessor based temperature control and monitoring device.
Product features:

Ultra-high vacuum (UHV) technology: ensures precise layer operation and control.
Ultra-high Purity (UHP) technology: Combined with ultra-high vacuum technology for precise layer operation.
Rapid thermal propagation heating: ensures uniform layer thickness for maximum growth and optical performance.
Multi-input gas injection system: Used to fine-tune element concentration and control substrate temperature to precisely control material composition and layer thickness.
Advanced mechanical systems: Special features such as robotic wafer handling and laser cutting Windows are used to improve gas injection.

839-101612-887

Product parameter

Accuracy: Level 0.5
Discrete input: remote; isolated
Front panel dimensions: 282 W X 216 H X 96 D mm
Manufacturer: Woodward
Solution: 16 bits
Setting range: 1-32,000A
Weight: About 1850 grams

APPLICATION

Application field:

Semiconductor fabrication: Used in semiconductor wafer etching and ashing equipment to ensure that the wafer is firmly secured and properly aligned during the etching and ashing steps.
Advantages:

High precision: Improved chip etching and ashing process performance.
High reliability: Improve chip production and product quality.
Reduce particle pollution: Reduce process defects and particle pollution.
Reduce operating costs: Reduce operating costs and maintenance costs.
The reactor is designed for maximum safety and convenience while still providing superior performance. It is designed with an efficient cooler to avoid any overheating, ensure operator safety and provide an optimal working environment. Exhaust tools reduce harmful emissions, protecting both the operator and the environment

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